IEC 62751-2 Ed. 1.2 b:2023

This part of IEC 62751 gives the detailed method to be adopted for calculating the power losses in the valves for an HVDC system based on the “modular multi-level converter”, where each valve in the converter consists of a number of self-contained, two-terminal controllable voltage sources connected in series. It is applicable both for the cases where each modular cell uses only a single turn-off semiconductor device in each switch position, and the case where each switch position consists of a number of turn-off semiconductor devices in series (topology also referred to as “cascaded two-level converter”). The main formulae are given for the two-level “half-bridge” configuration but guidance is also given in Annex A as to how to extend the results to certain other types of MMC building block configuration.

The standard is written mainly for insulated gate bipolar transistors (IGBTs) but may also be used for guidance in the event that other types of turn-off semiconductor devices are used.

Power losses in other items of equipment in the HVDC station, apart from the converter valves, are excluded from the scope of this standard.

This standard does not apply to converter valves for line-commutated converter HVDC systems.