IEC 63068-2 Ed. 1.0 en:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

International Electrotechnical Commission, 01/30/2019

Publisher: IEC

File Format: PDF

$95.00$190.00

Description

Published:30/01/2019

Pages:25

File Size:1 file , 3 MB

Note:This product is unavailable in Ukraine, Russia, Belarus

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

More IEC standard pdf

IEC 60092-304 Ed. 4.0 en:2022

Electrical installations in ships - Part 304: Equipment - Semiconductor convertors

$47.00 $95.00

IEC 61753-043-02 Ed. 1.0 b:2022

Fibre optic interconnecting devices and passive components - Performance standard - Part 043-02: Simplex patch-cord style single-mode fibre wavelength selective devices with cylindrical ferrule connectors for category C - Controlled environment

$117.00 $234.00

IEC /SRD 62913-1 Ed. 2.0 en:2022

Generic smart grid requirements - Part 1: Specific application of the Use Case methodology for defining generic smart grid requirements according to the IEC systems approach

$177.00 $354.00

IEC 60118-0 Ed. 4.0 b:2022

Electroacoustics - Hearing aids - Part 0: Measurement of the performance characteristics of hearing aids

$208.00 $417.00