JEDEC JESD 24-10 (R2002)

ADDENDUM No. 10 to JESD24 - TEST METHOD FOR MEASUREMENT OF REVERSE RECOVERY TIME trr FOR POWER MOSFET DRAIN-SOURCE DIODES

JEDEC Solid State Technology Association, 08/01/1994

Publisher: JEDEC

File Format: PDF

$26.00$53.00

Published:01/08/1994

Pages:11

File Size:1 file , 230 KB

Note:This product is unavailable in Russia, Ukraine, Belarus

Test method to measure the reverse recovery characteristics of the drain source diode of a power MOSFET.

DEFINITION OF THE SSTE32882 REGISTERING CLOCK DRIVER WITH PARITY AND QUAD CHIP SELECTS FOR DDR3/DDR3L/DDR3U RDIMM 1.5 V/1.35 V/1.25 V APPLICATIONS

$58.00 $116.00

TEMPERATURE, BIAS, AND OPERATING LIFE

$27.00 $54.00

HIGH TEMPERATURE STORAGE LIFE

$25.00 $51.00

LOW POWER DOUBLE DATA RATE 2 (LPDDR2)

$152.00 $305.00