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JEDEC Solid State Technology Association, 01/01/2023
Publisher: JEDEC
File Format: PDF
$147.00$295.25
Published:01/01/2023
Pages:270
File Size:1 file , 7.7 MB
Note:This product is unavailable in Russia, Ukraine, Belarus
The HBM3 DRAM is tightly coupled to the host compute die with a distributed interface. The interface is divided into independent channels. Each channel is completely independent of one another. Channels are not necessarily synchronous to each other. The HBM3 DRAM uses a wide-interface architecture to achieve high-speed, low power operation. Each channel interface maintains a 64 bit data bus operating at double data rate (DDR).
ADDENDUM No. 2 to JESD24 - GATE CHARGE TEST METHOD
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ADDENDUM No. 6 to JESD12 - INTERFACE STANDARD FOR SEMICUSTOM INTEGRATED CIRCUITS
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ADDENDUM No. 4 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR BIPOLAR TRANSISTORS (DELTA BASE-EMITTER VOLTAGE METHOD)
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ADDENDUM No. 3 to JESD24 - THERMAL IMPEDANCE MEASUREMENTS FOR VERTICAL POWER MOSFETS (DELTA SOURCE-DRAIN VOLTAGE METHOD)
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